| PART |
Description |
Maker |
| GS816273CGC-250V GS816273CC-250IV |
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 2.5 ns, PBGA209
|
GSI Technology, Inc.
|
| GS816272CC-333 GS816272CC-150 GS816272CC-150I GS81 |
256K x 72 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS882V36BD-250I GS882V36BGB-333I GS882V18BGB-333 G |
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 256K X 36 CACHE SRAM, 4.5 ns, PBGA119
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 4.5 ns, PBGA119
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 256K X 36 CACHE SRAM, 4.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS816236BB-150I |
1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PBGA119
|
GSI Technology, Inc.
|
| CY7C1328G-133AXI |
4-Mbit (256K x 18) Pipelined DCD Sync SRAM 256K X 18 CACHE SRAM, 4 ns, PQFP100
|
Cypress Semiconductor, Corp.
|
| GS88237BB-V GS88237BGB-200V GS88237BB-250IV GS8823 |
256K x 36 9Mb SCD/DCD Sync Burst SRAM
|
GSI[GSI Technology]
|
| GS88237BGB-333I GS88237BB-200I |
256K x 36 9Mb SCD/DCD Sync Burst SRAM 256K X 36 CACHE SRAM, 2 ns, PBGA119
256K x 36 9Mb SCD/DCD Sync Burst SRAM 256K X 36 CACHE SRAM, 2.7 ns, PBGA119
|
GSI Technology, Inc.
|
| GS88218BGB-200V GS88236BB-250IV |
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 6.5 ns, PBGA119
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 256K X 36 CACHE SRAM, 5.5 ns, PBGA119
|
GSI Technology, Inc.
|
| GS88218AB-200I GS88218AB-250 GS88218AB-133 GS88218 |
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 6.5 ns, PBGA119
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 5.5 ns, PBGA119
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 8.5 ns, PBGA119
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 7.5 ns, PBGA165
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 6 ns, PBGA165
|
GSI Technology, Inc.
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| GS88132BT-150IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 |
10ns 256K x 18 4Mb sync burst SRAM
12ns 256K x 18 4Mb sync burst SRAM
8.5ns 256K x 18 4Mb sync burst SRAM
8ns 256K x 18 4Mb sync burst SRAM
10ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
|
